| 圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
|---|---|---|---|---|---|---|
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STGW20IH125DF | STMicroelectronics | TO-247 | IGBT 1250V 40A 259W TO-247 | ||
| 參數(shù)：STMicroelectronics|管件|-|在售|溝槽型場(chǎng)截止|1250 V|40 A|80 A|2.5V @ 15V，15A|259 W|410μJ（關(guān)）... | ||||||
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RJP65T54DPM-A0#T2 | Renesas Electronics America Inc | TO-3PFP | IGBT TRENCH 650V 60A TO-3PFP | ||
| 參數(shù)：Renesas Electronics America Inc|管件|-|在售|溝道|650 V|60 A|-|1.68V @ 15V，30A|63.5 W|3... | ||||||
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FGHL40T65MQD | onsemi | TO-247-3 | IGBT 650V 40A TO247 | ||
| 參數(shù)：onsemi|管件|-|在售|溝槽型場(chǎng)截止|650 V|80 A|160 A|1.8V @ 15V，40A|238 W|860μJ（開(kāi)），520μJ（關(guān)）|標(biāo)準(zhǔn)... | ||||||
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IHW30N110R3XKSA1 | Infineon Technologies | - | IGBT TO-247-3 | ||
| 參數(shù)：Infineon Technologies|管件|*|在售|-|-|-|-|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
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IXGP12N120A3 | IXYS | TO-220-3 | IGBT 1200V 22A 100W TO220 | ||
| 參數(shù)：IXYS|管件|GenX3?|在售|PT|1200 V|22 A|60 A|3V @ 15V，12A|100 W|-|標(biāo)準(zhǔn)|20.4 nC|-|-|-|-55°... | ||||||
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FGH40T65SHD-F155 | onsemi | TO-247-3 | IGBT 650V 80A 268W TO-247 | ||
| 參數(shù)：onsemi|管件|-|在售|溝槽型場(chǎng)截止|650 V|80 A|120 A|2.1V @ 15V，40A|268 W|1.01mJ（開(kāi)），297μJ（關(guān)）|標(biāo)... | ||||||
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GT50N322A | Toshiba Semiconductor and Storage | TO-3P（N） | PB-F IGBT / TRANSISTOR TO-3PN IC | ||
| 參數(shù)：Toshiba Semiconductor and Storage|管件|-|在售|-|1000 V|50 A|120 A|2.8V @ 15V，60A|156... | ||||||
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GT50JR22(STA1,E,S) | Toshiba Semiconductor and Storage | TO-3P（N） | 15 | PB-F IGBT / TRANSISTOR TO-3PN(OS | |
| 參數(shù)：Toshiba Semiconductor and Storage|管件|-|在售|-|600 V|50 A|100 A|2.2V @ 15V，50A|230 ... | ||||||
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GT50JR21(STA1,E,S) | Toshiba Semiconductor and Storage | TO-3P（N） | PB-F IGBT / TRANSISTOR TO-3PN(OS | ||
| 參數(shù)：Toshiba Semiconductor and Storage|管件|-|在售|-|600 V|50 A|100 A|2V @ 15V，50A|230 W|... | ||||||
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IKWH40N65WR6XKSA1 | Infineon Technologies | PG-TO247-3-32 | IGBT TRENCH | ||
| 參數(shù)：Infineon Technologies|管件|TrenchStop? 5 WR6|在售|溝道|650 V|75 A|120 A|1.85V @ 15V，40... | ||||||
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RJH65T14DPQ-A0#T0 | Renesas Electronics America Inc | TO-247A | IGBT TRENCH 650V 100A TO247A | ||
| 參數(shù)：Renesas Electronics America Inc|管件|-|在售|溝道|650 V|100 A|-|1.75V @ 15V，50A|250 W|1... | ||||||
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FGHL50T65MQDT | onsemi | TO-247-3 | FS4 MID SPEED IGBT 650V 50A TO24 | ||
| 參數(shù)：onsemi|管件|-|在售|溝槽型場(chǎng)截止|650 V|80 A|200 A|1.8V @ 15V，40A|268 W|1.19mJ（開(kāi)），630μJ（關(guān)）|標(biāo)... | ||||||
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RGTH60TS65GC13 | Rohm Semiconductor | TO-247 | IGBT TRENCH FIELD 650V 58A TO247 | ||
| 參數(shù)：Rohm Semiconductor|管件|-|在售|溝槽型場(chǎng)截止|650 V|58 A|120 A|2.1V @ 15V，30A|194 W|-|標(biāo)準(zhǔn)|58 ... | ||||||
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RGW40TK65GVC11 | Rohm Semiconductor | TO-3PFM | IGBT TRNCH FIELD 650V 27A TO3PFM | ||
| 參數(shù)：Rohm Semiconductor|管件|-|在售|溝槽型場(chǎng)截止|650 V|27 A|80 A|1.9V @ 15V，20A|61 W|330μJ（開(kāi)），3... | ||||||
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RJP65T43DPM-00#T1 | Renesas Electronics America Inc | TO-3PFM | ABU / IGBT | ||
| 參數(shù)：Renesas Electronics America Inc|管件|-|在售|溝道|650 V|40 A|-|2.4V @ 15V，20A|68.8 W|17... | ||||||
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STGW40H65DFB-4 | STMicroelectronics | TO-247-4 | IGBT | ||
| 參數(shù)：STMicroelectronics|管件|HB|在售|溝槽型場(chǎng)截止|650 V|80 A|160 A|2V @ 15V，40A|283 W|200μJ（開(kāi)），... | ||||||
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FGHL50T65MQDTL4 | onsemi | TO-247-4L | FS4 MID SPEED IGBT 650V 50A TO24 | ||
| 參數(shù)：onsemi|管件|-|在售|溝槽型場(chǎng)截止|650 V|80 A|200 A|1.8V @ 15V，50A|268 W|1mJ（開(kāi)），850μJ（關(guān)）|標(biāo)準(zhǔn)|9... | ||||||
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IKWH60N65WR6XKSA1 | Infineon Technologies | PG-TO247-3-32 | IGBT TRENCH | ||
| 參數(shù)：Infineon Technologies|管件|TrenchStop? 5 WR6|在售|溝槽型場(chǎng)截止|650 V|100 A|180 A|1.85V @ 1... | ||||||
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AFGHL40T65RQDN | onsemi | TO-247-3 | 650V/40A FS4 SCR IGBT T0247-3L A | ||
| 參數(shù)：onsemi|管件|Automotive, AEC-Q101|在售|場(chǎng)截止|650 V|46 A|160 A|1.82V @ 15V，40A|288 W|1.1... | ||||||
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RGTH00TS65DGC11 | Rohm Semiconductor | TO-247N | 1 | IGBT TRNCH FIELD 650V 85A TO247N | |
| 參數(shù)：Rohm Semiconductor|管件|-|不適用于新設(shè)計(jì)|溝槽型場(chǎng)截止|650 V|85 A|200 A|2.1V @ 15V，50A|277 W|-|標(biāo)... | ||||||
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