Vishay/Siliconix
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Vishay/Siliconix功率MOSFET晶體管和集成電路 (IC)用于管理和轉換計算機、手機和通信基礎架構中的電源,也可用計算機磁盤驅動器和汽車系統中的運動控制。 Vishay/Siliconix模擬開關IC用于對儀表儀器和多種工業產品中的模擬信號進行感應、開關和路徑設定。 |
圖片 | 型號 | 品牌 | 封裝 | 數量 | 描述 | PDF資料 |
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SI4466DY-E3 | Vishay/Siliconix | SO-8 | MOSFET 20V 13.2A 2.5W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI4466DY-T1 | Vishay/Siliconix | SO-8 | MOSFET 20V 13.2A 2.5W | ||
參數:制造商:Vishay,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極連續電流:9.5 A,電... | ||||||
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SI4466DY-T1-E3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 20V 13.2A 2.5W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI4466DY-T1-GE3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 20V 13.5A 3.0W 9.0mohm @ 4.5V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI4467DY-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 12V 12A 2.5W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI4467DY-T1 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 12V 12A 2.5W | ||
參數:制造商:Vishay,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連續電流:12 A,電阻汲... | ||||||
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SI4467DY-T1-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 12V 12A 2.5W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI4470EY | Vishay/Siliconix | SO-8 | MOSFET 60V 12.7A 3.75W | ||
參數:制造商:Vishay,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:9 A,電阻汲... | ||||||
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SI4470EY-E3 | Vishay/Siliconix | SO-8 | MOSFET 60V 12.7A 3.75W | ||
參數:制造商:Vishay,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:9 A,電阻汲... | ||||||
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SI4470EY-T1 | Vishay/Siliconix | SO-8 | MOSFET 60V 12.7A 1.85W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4470EY-T1-E3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 60 Volt 12.7A 3.75W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4470EY-T1-GE3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 60V 12.7A 3.75W 11mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4472DY-T1-E3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 150V 7.7A 5.9W 45mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:150 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SI4472DY-T1-GE3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 150V 7.7A 5.9W 45mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:150 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SI4473DY | Vishay/Siliconix | SO-8 | MOSFET 14V 13A 3W | ||
參數:制造商:Vishay,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:14 V,閘/源擊穿電壓:+/- 12 V,漏極連續電流:9 A,電阻汲... | ||||||
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SI4473DY-E3 | Vishay/Siliconix | SO-8 | MOSFET 14V 13A 3W | ||
參數:制造商:Vishay,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:14 V,閘/源擊穿電壓:+/- 12 V,漏極連續電流:9 A,電阻汲... | ||||||
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SI4473DY-T1-E3 | Vishay/Siliconix | SO-8 | MOSFET 14 Volt 13 Amp 3.0W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:14 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI4477DY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 30V 6.2mohm @ 4.5V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 20 V,閘/源擊穿電壓:+/- 12 V,... | ||||||
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SI4480DY-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 80V 6A 2.5W | ||
參數:制造商:Vishay,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:80 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:6 A,電阻汲... | ||||||
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SI4480DY-T1 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 80V 6A 2.5W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:80 V,閘/源擊穿電壓:+/- 20 V,漏極... |
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