Vishay/Siliconix
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Vishay/Siliconix功率MOSFET晶體管和集成電路 (IC)用于管理和轉(zhuǎn)換計(jì)算機(jī)、手機(jī)和通信基礎(chǔ)架構(gòu)中的電源,也可用計(jì)算機(jī)磁盤驅(qū)動(dòng)器和汽車系統(tǒng)中的運(yùn)動(dòng)控制。 Vishay/Siliconix模擬開關(guān)IC用于對(duì)儀表儀器和多種工業(yè)產(chǎn)品中的模擬信號(hào)進(jìn)行感應(yīng)、開關(guān)和路徑設(shè)定。 |
圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
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SI4447DY-T1-GE3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | 1,640 | MOSFET 40V 4.5A 2.0W 54mohm @ 10V | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:+/- 16 V,漏極... | ||||||
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SI4448DY-T1-E3 | Vishay/Siliconix | 8-SOIC | MOSFET 12V 50A 7.8W 1.7mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI4448DY-T1-GE3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 12V 50A 7.8W 1.7mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI4450DY-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 60V 7.5A 2.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4450DY-T1 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 60V 7.5A 2.5W | ||
參數(shù):制造商:Vishay,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)電流:7.5 A,電... | ||||||
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SI4450DY-T1-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 60V 7.5A 2.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4450DY-T1-GE3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 60V 7.5A 2.5W 24mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4451DY-T1-E3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 12V 14A 3.0W 8.25mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI4451DY-T1-GE3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 12V 14A 3.0W 8.25mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI4453DY-T1 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 12V 14A 3.0W 6.5mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI4453DY-T1-E3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 12V 14A 3.0W 6.5mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI4453DY-T1-GE3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 12V 14A 3.0W 6.5mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI4464DY-T1-E3 | Vishay/Siliconix | 8-SOIC | MOSFET 200V 2.2A 0.24Ohm | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SI4464DY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 200V 2.2A 2.5W 240mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SI4465ADY-T1-E3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | 3,764 | MOSFET 8.0V 13.7A 3.0W 9.0mohm @ 4.5V | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:8 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)... | ||||||
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SI4465ADY-T1-GE3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | 2,460 | MOSFET 8.0V 13.7A 3.0W 9.0mohm @ 4.5V | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:8 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)... | ||||||
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SI4465DY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 8V 14A 2.5W | ||
參數(shù):制造商:Vishay,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:8 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)電流:14 A,電阻汲極... | ||||||
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SI4465DY-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 8V 14A 2.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:8 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)... | ||||||
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SI4465DY-T1 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 8V 4.5A 2.5W | ||
參數(shù):制造商:Vishay,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:8 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)電流:14 A,電阻汲極... | ||||||
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SI4465DY-T1-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 8V 4.5A 2.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:8 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)... |
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