Vishay/Siliconix
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Vishay/Siliconix功率MOSFET晶體管和集成電路 (IC)用于管理和轉(zhuǎn)換計(jì)算機(jī)、手機(jī)和通信基礎(chǔ)架構(gòu)中的電源,也可用計(jì)算機(jī)磁盤驅(qū)動(dòng)器和汽車系統(tǒng)中的運(yùn)動(dòng)控制。 Vishay/Siliconix模擬開關(guān)IC用于對(duì)儀表儀器和多種工業(yè)產(chǎn)品中的模擬信號(hào)進(jìn)行感應(yīng)、開關(guān)和路徑設(shè)定。 |
圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
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IRFI744GPBF | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 450V 4.9 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:450 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI820G | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 500V 2.1 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI820GPBF | Vishay/Siliconix | TO-220-3 全封裝,隔離接片 | MOSFET N-Chan 500V 2.1 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI830G | Vishay/Siliconix | TO-220-3 全封裝,隔離接片 | MOSFET N-Chan 500V 3.1 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI830GPBF | Vishay/Siliconix | TO-220-3 全封裝,隔離接片 | 980 | MOSFET N-Chan 500V 3.1 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI840G | Vishay/Siliconix | TO-220-3 全封裝,隔離接片 | MOSFET N-Chan 500V 4.6 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI840GLC | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 500V 4.5 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 30 V,漏... | ||||||
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IRFI840GLCPBF | Vishay/Siliconix | TO-220-3 全封裝,隔離接片 | 730 | MOSFET N-Chan 500V 4.5 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 30 V,漏... | ||||||
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IRFI840GPBF | Vishay/Siliconix | TO-220-3 全封裝,隔離接片 | 917 | MOSFET N-Chan 500V 4.6 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI9520G | Vishay/Siliconix | TO-220-3 | MOSFET P-Chan 100V 5.2 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 100 V,閘/源擊穿電壓:+/- 20 V... | ||||||
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IRFI9520GPBF | Vishay/Siliconix | TO-220-3 全封裝,隔離接片 | 364 | MOSFET P-Chan 100V 5.2 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 100 V,閘/源擊穿電壓:+/- 20 V... | ||||||
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IRFI9530G | Vishay/Siliconix | TO-220-3 | MOSFET P-Chan 100V 7.7 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 100 V,閘/源擊穿電壓:+/- 20 V... | ||||||
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IRFI9530GPBF | Vishay/Siliconix | TO-220-3 全封裝,隔離接片 | 4,277 | MOSFET P-Chan 100V 7.7 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 100 V,閘/源擊穿電壓:+/- 20 V... | ||||||
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IRFI9540G | Vishay/Siliconix | TO-220-3 | MOSFET P-Chan 100V 11 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 100 V,閘/源擊穿電壓:+/- 20 V... | ||||||
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IRFI9540GPBF | Vishay/Siliconix | TO-220-3 全封裝,隔離接片 | 552 | MOSFET P-Chan 100V 11 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 100 V,閘/源擊穿電壓:+/- 20 V... | ||||||
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IRFI9610G | Vishay/Siliconix | TO-220-3 | MOSFET P-Chan 200V 2.0 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 200 V,閘/源擊穿電壓:+/- 20 V... | ||||||
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IRFI9610GPBF | Vishay/Siliconix | TO-220-3 | MOSFET P-Chan 200V 2.0 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 200 V,閘/源擊穿電壓:+/- 20 V... | ||||||
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IRFI9620G | Vishay/Siliconix | TO-220-3 | MOSFET P-Chan 200V 3.0 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 200 V,閘/源擊穿電壓:+/- 20 V... | ||||||
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IRFI9620GPBF | Vishay/Siliconix | TO-220-3 全封裝,隔離接片 | 5,139 | MOSFET P-Chan 200V 3.0 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 200 V,閘/源擊穿電壓:+/- 20 V... | ||||||
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IRFI9630G | Vishay/Siliconix | TO-220-3 | MOSFET P-Chan 200V 4.3 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 200 V,閘/源擊穿電壓:+/- 20 V... |
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