Vishay/Siliconix
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Vishay/Siliconix功率MOSFET晶體管和集成電路 (IC)用于管理和轉換計算機、手機和通信基礎架構中的電源,也可用計算機磁盤驅動器和汽車系統中的運動控制。 Vishay/Siliconix模擬開關IC用于對儀表儀器和多種工業產品中的模擬信號進行感應、開關和路徑設定。 |
圖片 | 型號 | 品牌 | 封裝 | 數量 | 描述 | PDF資料 |
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SI4838DY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 12V 25A 3.5W 3.0mohm @ 4.5V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI4702DY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30V 5.5A 1.25W | ||
參數:制造商:Vishay,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,漏極連續電流:5.5 A,電阻汲極/源極 RDS(導通):24... | ||||||
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SI4700DY | Vishay/Siliconix | SOIC-8 | MOSFET SPDT Power Select Sw | ||
參數:制造商:Vishay,RoHS:否,安裝風格:SMD/SMT,封裝形式:SOIC-8,工廠包裝數量:100,... | ||||||
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SI4462DY-T1-E3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 200V 1.5A 2.5W 480mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SI4462DY-T1-GE3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 200V 1.5A 2.5W 480mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SI4703DY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30V 4A 1.2W | ||
參數:制造商:Vishay,RoHS:否,晶體管極性:N-Channel,漏極連續電流:4 A,電阻汲極/源極 RDS(導通):66 mOhms,配置:Dual,最大... | ||||||
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Si4714DY-T1-GE3 | Vishay/Siliconix | SOIC-8 | MOSFET 30 Volts 13.6 Amps 4.5 Watts | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏極連續電流... | ||||||
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SI4712DY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 30V 14.6A 5.0W 13mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:2.5 V,漏極連續電... | ||||||
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SI4710CY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET P-Ch Battery Disc | ||
參數:制造商:Vishay,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:6 A,電阻汲... | ||||||
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SI4710CY-T1-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET P-Ch Battery Switch | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4455DY-T1-E3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 150V 8.9A 5.9W 295mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:150 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SI4455DY-T1-GE3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | 1,698 | MOSFET 150V 8.9A 5.9W 295mohm @ 10V | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:150 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SI4456DY-T1-E3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 40V 33A 7.8W 3.8mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4456DY-T1-GE3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 40V 33A 7.8W 3.8mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4459ADY-T1-GE3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | 120,138 | MOSFET 30V 29A 7.8W 5.0mohm @ 10V | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4463BDY-T1-E3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | 1,467 | MOSFET 20V 13.7A 0.011Ohm | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI4463BDY-T1-GE3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 20V 13.7A 3.0W 11mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI4463DY-E3 | Vishay/Siliconix | SO-8 | MOSFET 20V 10A 2.5W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI4463DY-T1 | Vishay/Siliconix | SO-8 | MOSFET 20V 10A 2.5W | ||
參數:制造商:Vishay,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極連續電流:9 A,電阻汲... | ||||||
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SI4463DY-T1-E3 | Vishay/Siliconix | SO-8 | MOSFET 20V 10A 2.5W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... |
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