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Ixys

Ixys

IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a wide range of power system applications.
圖片 型號 品牌 封裝 數(shù)量 描述 PDF資料
點(diǎn)擊查看IXFN55N50參考圖片 IXFN55N50 Ixys SOT-227B MOSFET 55 Amps 500V 0.08 Rds
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)電流:55 A,電阻汲...
點(diǎn)擊查看IXFN55N50F參考圖片 IXFN55N50F Ixys SOT-227B MOSFET
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)電流:55 A,電阻汲...
點(diǎn)擊查看IXFN56N90P參考圖片 IXFN56N90P Ixys SOT-227-4,miniBLOC 18 MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:900 V,漏極連續(xù)電流:56 A,電阻汲極/源極 RDS(導(dǎo)通):135 ...
點(diǎn)擊查看IXFN60N60參考圖片 IXFN60N60 Ixys SOT-227-4,miniBLOC MOSFET 600V 60A
參數(shù):制造商:IXYS,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 20 V,漏極連...
點(diǎn)擊查看IXFN60N80P參考圖片 IXFN60N80P Ixys SOT-227-4,miniBLOC MOSFET DIODE Id54 BVdass800
參數(shù):制造商:IXYS,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:800 V,閘/源擊穿電壓:+/- 30 V,漏極連...
點(diǎn)擊查看IXFN62N80Q3參考圖片 IXFN62N80Q3 Ixys SOT-227-4,miniBLOC MOSFET Q3Class HiPerFET Pwr MOSFET 800V/49A
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:800 V,閘/源擊穿電壓:30 V,漏極連續(xù)電流:49 A,電阻汲極/源極...
點(diǎn)擊查看IXFN64N50P參考圖片 IXFN64N50P Ixys SOT-227-4,miniBLOC MOSFET 500V 64A
參數(shù):制造商:IXYS,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 30 V,漏極連...
點(diǎn)擊查看IXFN64N60P參考圖片 IXFN64N60P Ixys SOT-227B MOSFET 600V 64A
參數(shù):制造商:IXYS,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏極連...
點(diǎn)擊查看IXFN66N50Q2參考圖片 IXFN66N50Q2 Ixys SOT-227B MOSFET 66 Amps 500V
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 30 V,漏極連續(xù)電流:66 A,電阻汲...
點(diǎn)擊查看IXFN70N60Q2參考圖片 IXFN70N60Q2 Ixys SOT-227B MOSFET 70 Amps 600V
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏極連續(xù)電流:70 A,電阻汲...
點(diǎn)擊查看IXFN72N55Q2參考圖片 IXFN72N55Q2 Ixys SOT-227B MOSFET 72 Amps 550 V 0.07 Rds
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:550 V,閘/源擊穿電壓:+/- 30 V,漏極連續(xù)電流:72 A,電阻汲...
點(diǎn)擊查看IXFN73N30參考圖片 IXFN73N30 Ixys SOT-227-4,miniBLOC MOSFET 300V 73A
參數(shù):制造商:IXYS,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:300 V,閘/源擊穿電壓:+/- 20 V,漏極連...
點(diǎn)擊查看IXFN73N30Q參考圖片 IXFN73N30Q Ixys SOT-227B MOSFET 73 Amps 300V 0.042 Rds
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:300 V,閘/源擊穿電壓:+/- 30 V,漏極連續(xù)電流:73 A,電阻汲...
點(diǎn)擊查看IXFN80N48參考圖片 IXFN80N48 Ixys SOT-227-4,miniBLOC MOSFET 480V 80A 45Rds SNGL DIE MOSFET
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:480 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)電流:80 A,電阻汲...
點(diǎn)擊查看IXFN80N50參考圖片 IXFN80N50 Ixys SOT-227B MOSFET 500V 80A
參數(shù):制造商:IXYS,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 20 V,漏極連...
點(diǎn)擊查看IXFN80N50P參考圖片 IXFN80N50P Ixys SOT-227B MOSFET 500V 80A
參數(shù):制造商:IXYS,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 30 V,漏極連...
點(diǎn)擊查看IXFN80N50Q2參考圖片 IXFN80N50Q2 Ixys SOT-227B MOSFET 80 Amps 500V 0.06 Rds
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 30 V,漏極連續(xù)電流:80 A,電阻汲...
點(diǎn)擊查看IXFN80N50Q3參考圖片 IXFN80N50Q3 Ixys SOT-227-4,miniBLOC 10 MOSFET Q3Class HiPerFET Pwr MOSFET 500V/63A
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:30 V,漏極連續(xù)電流:63 A,電阻汲極/源極...
點(diǎn)擊查看IXFN82N60P參考圖片 IXFN82N60P Ixys SOT-227-4,miniBLOC MOSFET DIODE Id82 BVdass600
參數(shù):制造商:IXYS,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏極連...
點(diǎn)擊查看IXFN82N60Q3參考圖片 IXFN82N60Q3 Ixys SOT-227B MOSFET Q3Class HiPerFET Pwr MOSFET 600V/66A
參數(shù):制造商:IXYS,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:30 V,漏極連續(xù)電流:66 A,電阻汲極/源極...

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